Capacitor for semiconductor integrated devices

专利名称：Capacitor for semiconductor integrated

devices

发明人：Raffaele Zambrano,Cesare Artoni申请号：US10327704申请日：20021220

公开号：US200301460A1公开日：20030807

专利附图：

摘要：A memory cell of a stacked type is formed by a MOS transistor and a

ferroelectric capacitor. The MOS transistor is formed in an active region of a substrate ofsemiconductor material and comprises a conductive region. The ferroelectric capacitor is

formed on top of the active region and comprises a first and a second electrodesseparated by a ferroelectric region. A contact region connects the conductive region ofthe MOS transistor to the first electrode of the ferroelectric capacitor. The ferroelectriccapacitor has a non-planar structure, formed by a horizontal portion and two sideportions extending transversely to, and in direct electrical contact with, the horizontalportion.

申请人：STMICROELECTRONICS S.R.I

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