专利名称:METHOD FOR PRODUCING AN
OPTOELECTRONIC DEVICE COMPRISING APLURALITY OF GALLIUM NITRIDE DIODES
发明人:François Templier,Lamine Benaissa,Marc
Rabarot
申请号:US16095335申请日:20160513
公开号:US20190131343A1公开日:20190502
专利附图:
摘要:A method of manufacturing an optoelectronic device, including the successive
steps of: a) transferring, onto a surface of a control integrated circuit including a pluralityof metal connection pads, an active diode stack including at least first and second dopedsemiconductor layers of opposite conductivity types, so that the second layer of thestack is electrically connected to the metal pads of the control circuit; and b) forming inthe active stack trenches delimiting a plurality of diodes connected to different metalpads of the control circuit.
申请人:Commissariat à I'Énergie Atomique et aux Énergies Alternatives,Thales
地址:Paris FR,Courbevoi FR
国籍:FR,FR
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