METHOD FOR PRODUCING AN OPTOELECTRONIC DEVICE COMP

专利名称：METHOD FOR PRODUCING AN

OPTOELECTRONIC DEVICE COMPRISING APLURALITY OF GALLIUM NITRIDE DIODES

发明人：François Templier,Lamine Benaissa,Marc

Rabarot

申请号：US16095335申请日：20160513

公开号：US20190131343A1公开日：20190502

专利附图：

摘要：A method of manufacturing an optoelectronic device, including the successive

steps of: a) transferring, onto a surface of a control integrated circuit including a pluralityof metal connection pads, an active diode stack including at least first and second dopedsemiconductor layers of opposite conductivity types, so that the second layer of thestack is electrically connected to the metal pads of the control circuit; and b) forming inthe active stack trenches delimiting a plurality of diodes connected to different metalpads of the control circuit.

申请人：Commissariat à I'Énergie Atomique et aux Énergies Alternatives,Thales

地址：Paris FR,Courbevoi FR

国籍：FR,FR

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