专利名称：High voltage resistance element发明人：Yoshitaka Sugawara申请号：US06/434057申请日：19821013公开号：US04553125A公开日：19851112
摘要：A resistance element capable of withstanding a high voltage is formed throughimpurity diffusion in a single crystal island of a semiconductor integrated circuitsubstrate. The resistance element includes a resistive region formed in an exposedsurface of the single crystal island and folded reciprocatively by at least one and a halfturns in a planar zigzag-like pattern. The pitch at which the resistive region is folded isdecreased as viewed in the direction in which extension of depletion layer formed withinthe single crystal island upon application of a voltage between two ends of the resistiveregion is decreased.
申请人：HITACHI, LTD.
代理机构：Antonelli, Terry & Wands
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