QUASI PARTICLE INJECTION TRANSISTOR

专利名称：QUASI PARTICLE INJECTION TRANSISTOR发明人：MUELLER, PAUL申请号：EP94905661.8申请日：19940120公开号：EP0788663B1公开日：19981216

摘要：A quasi particle injection transistor is constituted of layers comprising aninjector and one or several acceptors. The injector and all acceptors consist of a hightemperature supraconductor. Each high temperature supraconductor in turn representsa crystalline stack of intrinsic tunnel contacts. Each tunnel contact results from an intrinsicproperty of the high temperature supraconductive crystal when the CuO2 planes ordouble planes are separated by insulating intermediate layers which may be used astunnel barriers. The resulting 3-connection switching elements have a high amplification,so that a quasi particle injection transistor of the intrinsic type may drive a large numberof further switching elements of the same type. On this basis highly integrated logicalswitching circuits made of high temperature supraconductors may be built.

申请人：MUELLER, PAUL,MUELLER PAUL,MUELLER, PAUL

地址：DE

国籍：DE

代理机构：Rost, Jürgen, Dipl.-Ing.

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