IMPROVEMENTS IN AND RELATING TO VERTICAL-CAVITY SE

专利名称：IMPROVEMENTS IN AND RELATING TO

VERTICAL-CAVITY SEMICONDUCTOROPTICAL DEVICES

发明人：CALVEZ, Stephane Luc Dominique,HOPKINS,

John-Mark,BURNS, David,DAWSON, MartinDavid

申请号：EP04722906.7申请日：20040324公开号：EP1606863A2公开日：20051221

摘要：An optical device comprises an active semiconductor region 130 for providinggain for signal light 170. A signal light reflector 120 reflects the signal light 170 throughthe active region in a direction out of the plane of the active region. A pump lightreflector 120 reflects pump light to form a standing wave 160 in the device. The activelayer, signal light reflector and pump light reflector may be monolithically integratedwithin a chip. The reflectors may be Distributed Bragg Reflectors. Gain elements (fig 10:133), which may be quantum wells, absorb pump light to provide gain to the signal light.The absorbers may be disposed at or near pump light antinodes and antinodes ofstanding waves in the signal light. Alternatively, an absorbing element 191 may be at ornear a node in the pump standing wave, acting as a saturable absorber for the signalwave to achieve passive modelocking to produce a pulsed output. A second device 133acts as a gain element to absorb pump light.

申请人：University of Strathclyde

地址：McCance Building, 16 Richmond Street Glasgow G1 1XQ GB

国籍：GB

代理机构：Critten, Matthew Peter

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