Q62702-Z2028资料

PNP Silicon Switching Transistors

High DC current gain: 0.1mA to 500mAqLow collector-emitter saturation voltageqComplementary types:PZT 2222 (NPN)

PZT 2222A (NPN)

q

PZT 2907PZT 2907A

TypePZT 2907PZT 2907AMarkingZT 2907ZT 2907AOrdering Code(tape and reel)Q62702-Z2028Q62702-Z2025Pin Configuration1234BCECPackage1)SOT-223Maximum RatingsParameterCollector-emitter voltageCollector-base voltageEmitter-base voltageCollector currentTotal power dissipation,TS= 110˚CJunction temperatureStorage temperature rangeThermal ResistanceJunction - ambient2)Junction - soldering pointRth JARth JS≤ 87≤ 27SymbolVCE0VCB0VEB0ICPtotTjTstgValuesPZT 2907PZT 2907A40606056001.5150– 65 … + 150UnitVmAW˚CK/W1)2)For detailed information see chapter Package Outlines.Package mounted on epoxy pcb 40mm× 40mm× 1.5mm/6cm2 Cu.Semiconductor Group1

5.91

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PZT 2907

PZT 2907A

Electrical CharacteristicsatTA = 25 ˚C, unless otherwise specified.ParameterSymbolmin.DC characteristicsCollector-emitter breakdown voltageIC = 10mA,IB = 0PZT 2907PZT 2907ACollector-base breakdown voltageIC = 10µA,IB = 0PZT 2907PZT 2907AEmitter-base breakdown voltageIE = 10µA,IE = 0Collector-base cutoff currentVCB = 50V,IE = 0VCB = 50V,IE = 0,TA = 150 ˚CEmitter-base cutoff currentVEB = 3V,IC = 0Collector-emitter cutoff currentVCE = 30V,+VBE = 0.5 VCollector-base cutoff currentVCE = 30V,+VBE = 0.5 VDC current gain1)IC = 0.1mA,VCE = 10VIC = 1mA,VCE = 10VIC = 10mA,VCE = 10VIC = 150mA,VCE = 10VIC = 500mA,VCE = 10VPZT 2907PZT 2907APZT 2907PZT 2907APZT 2907PZT 2907APZT 2907PZT 2907APZT 2907PZT 2907APZT 2907PZT 2907APZT 2907PZT 2907AIEB0ICEVIEBVhFE357550100751001001003050––––––––––––––––300300––V(BR)CE04060V(BR)CB06060V(BR)EB0ICB0––––––––––––––20102010105050–nAnAµAµAnA5––––––––––VValuestyp.max.Unit1)Pulse test conditions:t≤300µs,D = 2%.Semiconductor Group2

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PZT 2907

PZT 2907A

Electrical CharacteristicsatTA = 25 ˚C, unless otherwise specified.ParameterSymbolmin.DC characteristicsCollector-emitter saturation voltage1)IC = 150mA,IB = 15mAIC = 500mA,IB = 50mABase-emitter saturation voltage1)IC = 150mA,IB = 15mAIC = 500mA,IB = 50mAAC characteristicsTransition frequencyIC = 20mA,VCE = 20V,f = 100MHzCollector-base capacitanceVCB = 10V,f = 1MHzInput capacitanceVEB = 0.5V,f = 1MHzVCC = 30V,IC = 150mA, IB1 = 15mADelay timeRise timeVCC = 6V,IC = 150mA, IB1 =IB2 = 15mAStorage timeFall time(see diagrams)fTCoboCibo200––––––830MHzpFVCEsat––VBEsat––––1.32.6––0.41.6VValuestyp.max.Unittdtrtstgtf––––––––10408030nsnsnsns1)Pulse test conditions:t≤300µs,D = 2%.Semiconductor Group3

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PZT 2907

PZT 2907A

Input waveform and test circuit for determining delay, rise and turn-on timeTurn-on time when switched to–ICon = 150mA;–IBon = 15mA

Input waveform and test circuit for determining storage, fall and turn-off timeTurn-off time when switched to–ICon = 150mA;–IBon = 15mA to cut-off with +IBoff = 15mA

Pulse generator:duty factorpulse durationrise time

output impedance

Semiconductor Group

D = 2%tp = 200nstr≤2nsZo = 50Ω

4

Oscillograph:rise time

output impedance

tr≤5nsZi = 10 MΩ

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Total power dissipationPtot=f(TA*;TS)*Package mounted on epoxySaturation voltageIC=f(VBEsat,VCEsat)hFE=10Semiconductor Group PZT 2907

PZT 2907A

Transition frequencyfT=f(IC)VCE = 20V,f = 100 MHz

DC current gainhFE=f(IC)VCE=10V

5

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Permissible pulse loadPtot max/Ptot DC =f (tp)

Semiconductor Group PZT 2907

PZT 2907A

6