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CMOS device structures and method of making same

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专利名称：CMOS device structures and method of

making same

发明人：Heemyong Park,Anda C. Mocuta,Werner

Rausch

申请号：US09717971申请日：20001121公开号：US06303450B1公开日：20011016

专利附图：

摘要：Disclosed is a method comprising providing a silicon surface with an underlyinginsulator layer, providing a plurality of gates adjacent to source/drain regions, growing

source/drains between the said gates such that the source/drains are thicker in regionsof larger gate-to-gate pitch, and doping the source/drains with one or more dopantssuch that the dopants abut the underlying insulator layer.

申请人：INTERNATIONAL BUSINESS MACHINES CORPORATION

代理机构：Cantor Colburn LLP

代理人：Eric W. Petraske

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