专利名称:Conductor reservoir volume for integrated
circuit interconnects
发明人:Amit P. Marathe,Pin-Chin Connie
Wang,Christy Mei-Chu Woo
申请号:US097594申请日:20010111公开号:US072757B2公开日:20021029
专利附图:
摘要:An integrated circuit and manufacturing method therefor is provided having asemiconductor substrate with a semiconductor device. A device dielectric layer is formed
on the semiconductor substrate. A first dielectric layer on the device dielectric layer hasan opening formed therein including a conductor reservoir volume. A barrier layer linesthe channel opening. A conductor core fills the opening over the barrier layer. A seconddielectric layer is formed on the first dielectric layer and has a second channel and viaopening provided therein. A barrier layer lines the second channel and via opening exceptover the first channel opening. A conductor core fills the second channel and via openingover the barrier layer and the first conductor core to form the second channel and via.The conductor reservoir volume provides a supply of conductor material to prevent theformation of voids in the first channel and in the via.
申请人:ADVANCED MICRO DEVICES, INC.
代理人:Mikio Ishimaru
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