Conductor reservoir volume for integrated circuit

专利名称：Conductor reservoir volume for integrated

circuit interconnects

发明人：Amit P. Marathe,Pin-Chin Connie

Wang,Christy Mei-Chu Woo

申请号：US097594申请日：20010111公开号：US072757B2公开日：20021029

专利附图：

摘要：An integrated circuit and manufacturing method therefor is provided having asemiconductor substrate with a semiconductor device. A device dielectric layer is formed

on the semiconductor substrate. A first dielectric layer on the device dielectric layer hasan opening formed therein including a conductor reservoir volume. A barrier layer linesthe channel opening. A conductor core fills the opening over the barrier layer. A seconddielectric layer is formed on the first dielectric layer and has a second channel and viaopening provided therein. A barrier layer lines the second channel and via opening exceptover the first channel opening. A conductor core fills the second channel and via openingover the barrier layer and the first conductor core to form the second channel and via.The conductor reservoir volume provides a supply of conductor material to prevent theformation of voids in the first channel and in the via.

申请人：ADVANCED MICRO DEVICES, INC.

代理人：Mikio Ishimaru

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