专利名称：RAMO4 substrate and manufacturing
method thereof
发明人：Yoshifumi Takasu,Yoshio Okayama,Akihiko
Ishibashi,Isao Tashiro,Akio Ueta,MasakiNobuoka,Naoya Ryoki
申请号：US15424529申请日：20170203公开号：US10350725B2公开日：20190716
专利附图：
摘要：A RAMOsubstrate is formed from single crystal represented by a formula of
RAMO(in the formula, R indicates one or a plurality of trivalent elements selected from agroup consisting of Sc, In, Y, and a lanthanoid element, A indicates one or a plurality oftrivalent elements selected from a group consisting of Fe(III), Ga, and Al, and M indicatesone or a plurality of bivalent elements selected form a group consisting of Hg, Mn, Fe(II),Co, Cu, Zn, and Cd). An epitaxially-grown surface is provided on at least one surface of theRAMOsubstrate. The epitaxially-grown surface includes a plurality of cleavage surfaceswhich are regularly distributed, and are separated from each other.
申请人：Panasonic Intellectual Property Management Co., Ltd.
地址：Osaka JP
国籍：JP
代理机构：McDermott Will & Emery LLP
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