专利名称：PATTERNING PROCESS
发明人：Watanabe, Tsukasa,Ogihara, Tsutomu申请号：EP19175549.5申请日：20190521公开号：EP3572880A1公开日：20191127
专利附图：
摘要：The present invention is a patterning process, including the steps of: (1) formingthe first resist film from the first resist material containing a thermosetting compoundhaving a hydroxy group and/or a carboxy group each protected by an acid-labile group,an acid generator, and a sensitizer; (2) irradiating the first resist film with a high energy
beam or an electron beam to perform pattern exposure to deprotect the hydroxy groupand/or the carboxy group in a pattern exposed portion; (3) forming the second resist filmfrom the second resist material containing (A) metal compound on the first resist film,and forming a crosslinked portion in which the component (A) and the deprotectedhydroxy group and/or the deprotected carboxy group are crosslinked on the patternexposed portion; and (4) developing the second resist film with a developer to give ametal film pattern composed of the crosslinked portion. This provides a method forforming a thin film resist pattern with higher resolution and higher sensitivity.
申请人：Shin-Etsu Chemical Co., Ltd.
地址：6-1, Ohtemachi 2-chome, Chiyoda-ku, Tokyo JP
国籍：JP
代理机构：Wibbelmann, Jobst
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