METHODS OF FORMING CARBON NANOTUBES ARCHITECTURES

专利名称：METHODS OF FORMING CARBON

NANOTUBES ARCHITECTURES ANDCOMPOSITES WITH HIGH ELECTRICAL ANDTHERMAL CONDUCTIVITIES ANDSTRUCTURES FORMED THEREBY

发明人：Nachiket Raravikar,Daewoong Suh,Chris

Matayabas

申请号：US116288申请日：20070321

公开号：US20080233396A1公开日：20080925

专利附图：

摘要：Methods and associated structures of forming microelectronic devices aredescribed. Those methods may include method of forming a layered nanotube structurecomprising a wetting layer disposed on a nanotube, a Shottky layer disposed on thewetting layer, a barrier layer disposed on the Shottky layer, and a matrix layer disposedon the barrier layer.

申请人：Nachiket Raravikar,Daewoong Suh,Chris Matayabas

地址：Chandler AZ US,Phoenix AZ US,Chandler AZ US

国籍：US,US,US

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