专利名称：METHOD AND STRUCTURE OF
MONOLITHICALLY INTEGRATED IC ANDRESISTIVE MEMORY USING IC FOUNDRY-COMPATIBLE PROCESSES
发明人：Wei LU申请号：US14072657申请日：20131105
公开号：US20140054539A1公开日：20140227
专利附图：
摘要：The present invention relates to integrating a resistive o y device on top of an IC
substrate monolithically using IC-foundry compatible processes. A method for formingan integrated circuit includes receiving a semiconductor substrate having a CMOS ICdevice formed on a surface region, forming a dielectric layer overlying the CMOS ICdevice, forming first electrodes over the dielectric layer in a first direction, formingsecond electrodes over the first electrodes in along a second direction different fromthe first direction, and forming a two-terminal resistive memory cell at each intersectionof the first electrodes and the second electrodes using foundry-compatible processes,including: forming a resistive switching material having a controllable resistance,disposing an interface material including p-doped polycrystalline silicon germanium—containing material between the resistive switching material and the first electrodes, anddisposing an active metal material between the resistive switching material and thesecond electrodes.
申请人：Crossbar, Inc.
地址：Santa Clara CA US
国籍：US
更多信息请下载全文后查看
因篇幅问题不能全部显示，请点此查看更多更全内容