2N5551L-C-T92-K资料

UNISONIC TECHNOLOGIES CO., LTD 2N5551 HIGH VOLTAGE SWITCHING TRANSISTOR 󰂄 FEATURES * High collector-emitter voltage: VCEO=160V * High current gain NPN SILICON TRANSISTOR 1SOT-89󰂄 APPLICATIONS * Telephone switching circuit * Amplifier 1TO-92*Pb-free plating product number: 2N5551L󰂄 ORDERING INFORMATION Order Number Pin AssignmentPackage Packing Normal Lead Free Plating 1 2 3 2N5551-x-AB3-R 2N5551L-x-AB3-R SOT-89 BCE Tape Reel 2N5551-x-T92-B 2N5551L-x-T92-B TO-92 EBCTape Box 2N5551-x-T92-K 2N5551L-x-T92-K TO-92 EBCBulk 2N5551L-x-AB3-R(1)Packing Type(2)Package Type(3)Rank(4)Lead Plating(1) B: Tape Box, K: Bulk, R: Tape Reel(2) T92: TO-92, AB3: SOT-89(3) x: refer to Classification of hFE(4) L: Lead Free Plating, Blank: Pb/Sn www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 4 QW-R201-002.B 元器件交易网www.cecb2b.com

2N5551 NPN SILICON TRANSISTOR 󰂄 ABSOLUTE MAXIMUM RATINGS (Ta=25℃, unless otherwise specified) PARAMETER SYMBOLRATINGS UNIT Collector-Base Voltage VCBO 180 V Collector-Emitter Voltage VCEO 160 V Emitter-Base Voltage VEBO 6 V Collector Dissipation TO-92 625 mW PC Collector Dissipation SOT-89500 mW Collector Current IC 600 mA Junction Temperature TJ +150 󰄊 Storage Temperature TSTG -55 ~ +150 󰄊 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 󰂄 ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified) PARAMETER SYMBOLCollector-Base Breakdown Voltage BVCBO Collector-Emitter Breakdown Voltage BVCEO Emitter-Base Breakdown Voltage BVEBO Collector Cut-off Current ICBO Emitter Cut-off Current IEBO hFE1 DC Current Gain(Note) hFE2 hFE3 Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Noise Figure VCE(SAT)VBE(SAT)fT Cob NF TEST CONDITIONS MIN TYP MAX UNITIC=100µA, IE=0 180 V IC=1mA, IB=0 160 V IE=10µA, IC=0 6 V VCB=120V, IE=0 50 nAVBE=4V,IC=0 50 nA VCE=5V, IC=1mA 80 160 400 80 VCE=5V, IC=10mA 80 VCE=5V, IC=50mA IC=10mA, IB=1mA 0.15 V IC=50mA, IB=5mA 0.2 IC=10mA, IB=1mA 1 V IC=50mA, IB=5mA 1 VCE=10V, IC=10mA, f=100MHz100 300 MHzVCB=10V, IE=0 f=1MHz 6.0 pFIC=0.25mA, VCE=5V 8 dBRS=1kΩ, f=10Hz ~ 15.7kHz Note: Pulse test: PW<300µs, Duty cycle<2% 󰂄 CLASSIFICATION OF hFE RANK A B C RANGE 80-170 150-240 200-400 www.unisonic.com.tw UNISONIC TECHNOLOGIES CO., LTD 2 of 4 QW-R201-002.B 元器件交易网www.cecb2b.com

2N5551 󰂄 TYPICAL CHARACTERISTICS Collector Output Capacitance 10Capacitance, Cob(pF)NPN SILICON TRANSISTOR DC Current Gain103VCE=5VDC Current Gain, hFE286420100f=1MHzIE=01021011011010010-1100101102103Collector-Base Voltage (V)Collector Current, IC(mA) Base-Emitter on Voltage103Collector Current, IC (mA)Saturation Voltage (V)Saturation Voltage101IC=10*IBVCE=5V102

100VBE(SAT)101

10-1VCE(SAT)10-210-1

100

00.20.40.60.81.0100101102103

Base-Emitter Voltage (V) Current Gain-Bandwidth ProductCollector Current, IC (mA)103Current Gain-Bandwidth Product,fT(MHz)VCE=10V210101100100101102103 Collector Current, IC(mA) www.unisonic.com.tw UNISONIC TECHNOLOGIES CO., LTD 3 of 4 QW-R201-002.B 元器件交易网www.cecb2b.com

2N5551 NPN SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values thatexceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, orother parameters) listed in products specifications of any and all UTC products described or containedherein. UTC products are not designed for use in life support appliances, devices or systems wheremalfunction of these products can be reasonably expected to result in personal injury. Reproduction inwhole or in part is prohibited without the prior written consent of the copyright owner. The informationpresented in this document does not form part of any quotation or contract, is believed to be accurateand reliable and may be changed without notice. www.unisonic.com.tw UNISONIC TECHNOLOGIES CO., LTD 4 of 4 QW-R201-002.B