Bipolar semiconductor devices with implanted recom

专利名称：Bipolar semiconductor devices with

implanted recombination region and theirmanufacture

发明人：Fisher, Carole Anne,Paxman, David

Henry,Oldfield, Reginald Charles

申请号：EP86200241.7申请日：19860219公开号：EP0196122B1公开日：190712

摘要：A bipolar semiconductor device with interdigitated emitter (2) and base (4)regions has a sub-region of the base (1), which has a shorter carrier recombination timethan the major part of the base region due to the presence of argon ion implantationinduced carrier recombination centres. The sub-region of the base is located centrallywith respect to the emitter region to intercept the transient current, the boundary ofwhich is marked by dashed lines (22), during device turn-off and so to promote collapseof the transient current and the avoidance of second breakdown of the device. Thecentrally located sub-region of the base is remote from the current path (21) from theemitter region edges (20) to the collector region (6) when the device is on. The ions maybe implanted at energies between 50 keV and 3 MeV and at doses between 1011 ionscm-2 and 1014 ions cm-2. The implantation mask may be provided by

photolithographically processed resist having a thickness between 0.5 µm and 4 µmdependant on the ion implantation energy. The depth of the sub-region and theconcentration of recombination centres within the sub-region may be varied by altering

the implantation conditions to tailor the effect of the sub-region to the likelihood of theonset of second breakdown at any part of a device structure. The invention is particularlyof use in transistors, as shown in the accompanying figure, and in thyristors.

申请人：PHILIPS ELECTRONIC AND ASSOCIATED INDUSTRIES LIMITED,N.V. PHILIPS'GLOEILAMPENFABRIEKEN

代理机构：Stevens, Brian Thomas

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