NGTB40N120FL2W-D 绝缘栅晶体管参数

This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications. Incorporated into the device is a softand fast co−packaged free wheeling diode with a low forward voltage.

Features

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••••••

Extremely Efficient Trench with Field Stop TechnologyTJmax = 175°C

Soft Fast Reverse Recovery DiodeOptimized for High Speed Switching10 ms Short Circuit CapabilityThese are Pb−Free Devices

40 A, 1200 VVCEsat = 2.0 VEoff = 1.10 mJ

CTypical Applications

•Solar Inverter

•Uninterruptible Power Inverter Supplies (UPS)•Welding

ABSOLUTE MAXIMUM RATINGS

Rating

Collector−emitter voltageCollector current

@ TC = 25°C@ TC = 100°CPulsed collector current, Tpulselimited by TJmax

Diode forward current

@ TC = 25°C@ TC = 100°C

Diode pulsed current, Tpulse limitedby TJmax

Gate−emitter voltage

Transient gate−emitter voltage(Tpulse = 5 ms, D < 0.10)Power Dissipation

@ TC = 25°C @ TC = 100°C

Short Circuit Withstand Time

VGE = 15 V, VCE = 500 V, TJ ≤ 150°COperating junction temperaturerange

Storage temperature rangeLead temperature for soldering, 1/8”from case for 5 seconds

SymbolVCESIC

Value12008040200

AA

8040200$20±30

AVUnitVA

G

CG

EETO−247CASE 340ALICMIF

MARKING DIAGRAM

IFMVGE

40N120FL2AYWWG

PDW

53526710−55 to +175−55 to +175

260

ms°C°C°C

AYWWG

= Assembly Location= Year

= Work Week

= Pb−Free Package

TSCTJTstgTSLD

Stresses exceeding those listed in the Maximum Ratings table may damage thedevice. If any of these limits are exceeded, device functionality should not beassumed, damage may occur and reliability may be affected.

ORDERING INFORMATION

Device

NGTB40N120FL2WG

Package

Shipping

TO−24730 Units / Rail(Pb−Free)

© Semiconductor Components Industries, LLC, 20141

June, 2014 − Rev. 4

Publication Order Number:

NGTB40N120FL2W/D

NGTB40N120FL2WG

THERMAL CHARACTERISTICS

Rating

Thermal resistance junction−to−case, for IGBTThermal resistance junction−to−case, for DiodeThermal resistance junction−to−ambient

SymbolRqJCRqJCRqJA

Value0.280.0

Unit°C/W°C/W°C/W

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter

STATIC CHARACTERISTICCollector−emitter breakdown voltage,gate−emitter short−circuitedCollector−emitter saturation voltageGate−emitter threshold voltageCollector−emitter cut−off current, gate−emitter short−circuited

Gate leakage current, collector−emittershort−circuited

VGE = 0 V, IC = 500 mAVGE = 15 V, IC = 40 A

VGE = 15 V, IC = 40 A, TJ = 175°C

VGE = VCE, IC = 400 mAVGE = 0 V, VCE = 1200 V

VGE = 0 V, VCE = 1200 V, TJ = 175°C

VGE = 20 V , VCE = 0 V

V(BR)CESVCEsatVGE(th)ICESIGES

1200−−4.5−−−

−2.002.405.5−−−

−2.40−6.50.42200

VVVmAnA

Test Conditions

Symbol

Min

Typ

Max

Unit

Input capacitanceOutput capacitance

Reverse transfer capacitanceGate charge totalGate to emitter chargeGate to collector charge

SWITCHING CHARACTERISTIC, INDUCTIVE LOADTurn−on delay timeRise time

Turn−off delay timeFall time

Turn−on switching lossTurn−off switching lossTotal switching lossTurn−on delay timeRise time

Turn−off delay timeFall time

Turn−on switching lossTurn−off switching lossTotal switching lossDIODE CHARACTERISTICForward voltageReverse recovery timeReverse recovery chargeReverse recovery current

VGE = 0 V, IF = 40 A

VGE = 0 V, IF = 50 A, TJ = 175°C

TJ = 25°C

IF = 40 A, VR = 400 VdiF/dt = 200 A/msTJ = 175°C

VCC = 600 V, IC = 40 A

Rg = 10 WVGE = 0 V/ 15 VTJ = 25°C

VCC = 600 V, IC = 40 A

Rg = 10 WVGE = 0 V/ 15VVCE = 600 V, IC = 40 A, VGE = 15 VVCE = 20 V, VGE = 0 V, f = 1 MHz

CiesCoesCresQgQgeQgctd(on)trtd(off)tfEonEoffEtstd(on)trtd(off)tfEonEoffEtsVFtrrQrrIrrm

−−−−−−

738523014031361151

−−−−−−

pF

nC

−−−−−−−−−−−−−−

1122861213.41.14.5111433042604.42.56.9

−−−−−−−−−−−−−−

ns

mJ

ns

mJ

−−−−−

2.002.302402.518

2.60−−−−

VnsmcA

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Productperformance may not be indicated by the Electrical Characteristics if operated under different conditions.

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NGTB40N120FL2WG

TYPICAL CHARACTERISTICS

160IC, COLLECTOR CURRENT (A)IC, COLLECTOR CURRENT (A)140120100806040200012345678VCE, COLLECTOR−EMITTER VOLTAGE (V)

7 V10 V9 V8 VVGE = 20 Vto 13 V11 VTJ = 25°C160140120100806040200

TJ = 150°CVGE = 20 Vto 13 V11 V10 V9 V8 V7 V12345678VCE, COLLECTOR−EMITTER VOLTAGE (V)

Figure 1. Output Characteristics

160IC, COLLECTOR CURRENT (A)IC, COLLECTOR CURRENT (A)14012010080604020001234567 V9 V8 V7810 V11 VVGE = 20 Vto 13 VTJ = −55°C160140120100806040200012Figure 2. Output Characteristics

TJ = 150°CTJ = 25°C3456710111213VCE, COLLECTOR−EMITTER VOLTAGE (V)VGE, GATE−EMITTER VOLTAGE (V)

Figure 3. Output Characteristics

VCE, COLLECTOR−EMITTER VOLTAGE (V)3.503.002.502.001.501.000.500.00−75−50−251

02550751001251501752000IC = 75 AIC = 40 AIC = 20 AC, CAPACITANCE (pF)10000100010010100000

Figure 4. Typical Transfer Characteristics

TJ = 25°CCiesCoesCres102030405060708090100TJ, JUNCTION TEMPERATURE (°C)VCE, COLLECTOR−EMITTER VOLTAGE (V)

Figure 5. VCE(sat) vs TJ

Figure 6. Typical Capacitance

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NGTB40N120FL2WG

TYPICAL CHARACTERISTICS

70VGE, GATE−EMITTER VOLTAGE (V)IF, FORWARD CURRENT (A)605040302010000.51.01.52.02.53.03..0VF, FORWARD VOLTAGE (V)

TJ = 25°CTJ = 150°C16141210820050100150200QG, GATE CHARGE (nC)

VCE = 600 VVGE = 15 VIC = 40 A250300350VCE = 600 VFigure 7. Diode Forward CharacteristicsFigure 8. Typical Gate Charge

.5SWITCHING LOSS (mJ)3.532.521.510.50020406080100EoffVCE = 600 VVGE = 15 VIC = 40 ARg = 10 W120140160SWITCHING TIME (ns)4Eon1000td(off)tf100td(on)trVCE = 600 VVGE = 15 VIC = 40 ARg = 10 W02040608010012014016010TJ, JUNCTION TEMPERATURE (°C)TJ, JUNCTION TEMPERATURE (°C)

Figure 9. Switching Loss vs. TemperatureFigure 10. Switching Time vs. Temperature

1210SWITCHING LOSS (mJ)820EoffVCE = 600 VVGE = 15 VTJ = 150°CRg = 10 W1000EonSWITCHING TIME (ns)td(off)tf100td(on)trVCE = 600 VVGE = 15 VTJ = 150°CRg = 10 W35556575855152535556575851051525IC, COLLECTOR CURRENT (A)IC, COLLECTOR CURRENT (A)

Figure 11. Switching Loss vs. ICFigure 12. Switching Time vs. IC

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NGTB40N120FL2WG

TYPICAL CHARACTERISTICS

1412SWITCHING LOSS (mJ)108205105EoffVCE = 600 VVGE = 15 VTJ = 150°CIC = 40 A10000VCE = 600 VVGE = 15 VTJ = 150°CIC = 40 ASWITCHING TIME (ns)Eon1000td(off)td(on)tf100tr1525355565758515253555657585Rg, GATE RESISTOR (W)Rg, GATE RESISTOR (W)

Figure 13. Switching Loss vs. RgFigure 14. Switching Time vs. Rg

76SWITCHING LOSS (mJ)3210350EoffVGE = 15 VTJ = 150°CIC = 40 ARg = 10 W400450500550600650700750800EonSWITCHING TIME (ns)1000td(off)tftd(on)100trVGE = 15 VTJ = 150°CIC = 40 ARg = 10 W40045050055060065070075080010350VCE, COLLECTOR−EMITTER VOLTAGE (V)VCE, COLLECTOR−EMITTER VOLTAGE (V)

Figure 15. Switching Loss vs. VCE

1000IC, COLLECTOR CURRENT (A)100IC, COLLECTOR CURRENT (A)1000Figure 16. Switching Time vs. VCE

50 ms10010dc operation1Single NonrepetitivePulse TC = 25°CCurves must be deratedlinearly with increasein temperature110100100010000VCE, COLLECTOR−EMITTER VOLTAGE (V)

100 ms1 ms100.10.011VGE = 15 V, TC = 125°C110100100010000VCE, COLLECTOR−EMITTER VOLTAGE (V)

Figure 17. Safe Operating AreaFigure 18. Reverse Bias Safe Operating Area

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NGTB40N120FL2WG

TYPICAL CHARACTERISTICS

250VCE = 600 V, RG = 10 W, VGE = 0/15 V200TC = 80°CIpk (A)150TC = 80°CTC = 110°C1005000.010.11101001000FREQUENCY (kHz)

Figure 19. Collector Current vs. Switching

Frequency

1SQUARE−WAVE PEAK R(t) (°C/W)RqJC = 0.2850% Duty Cycle0.120%10%5%0.012%C1Single Pulse1E−050.00010.001ON−PULSE WIDTH (s)

C2CnDuty Factor = t1/t2Peak TJ = PDM x ZqJC + TC0.010.11JunctionR1R2RnCaseRi (°C/W)0.0487470.0432520.0517030.1079320.025253Ci (J/°C)0.00870.0231200.0611630.0926511.2522500.0010.00011E−06Figure 20. IGBT Transient Thermal Impedance

1SQUARE−WAVE PEAK R(t) (°C/W)RqJC = 0.5050% Duty Cycle0.120%10%5%2%0.01Single PulseJunctionR1R2RnCaseRi (°C/W)0.0077030.0106130.0100970.0323290.0467910.0441790.0838700.0449380.217376Ci (J/°C)0.0001300.0009420.0031320.0030930.0067580.0226350.1192320.7037060.460033C1C2Cn0.0011E−06

Duty Factor = t1/t2Peak TJ = PDM x ZqJC + TC1E−05

0.0001

0.001

ON−PULSE WIDTH (s)

0.01

0.11

Figure 21. Diode Transient Thermal Impedance

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NGTB40N120FL2WG

Figure 22. Test Circuit for Switching Characteristics

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NGTB40N120FL2WG

Figure 23. Definition of Turn On Waveform

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NGTB40N120FL2WG

Figure 24. Definition of Turn Off Waveform

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PACKAGE DIMENSIONS

TO−247CASE 340ALISSUE A

NOTES:

1.DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.2.CONTROLLING DIMENSION: MILLIMETERS.3.SLOT REQUIRED, NOTCH MAY BE ROUNDED.

4.DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH. MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESEDIMENSIONS ARE MEASURED AT THE OUTERMOST EXTREME OF THE PLASTIC BODY.

5.LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BYL1.

6.∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5° TO THETOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91.7.DIMENSION A1 TO BE MEASURED IN THE REGION DEFINEDBY L1.

DIMAA1bb2b4cDEE2eLL1PQS

MILLIMETERSMINMAX4.705.302.202.601.001.401.652.352.603.400.400.8020.3021.4015.5016.2.325.495.45 BSC19.8020.803.504.503.553.655.406.206.15 BSC

NOTE 4EE2/2E2AAQBSEATINGPLANE

0.635PSMBAMNOTE 6NOTE 4D123NOTE 34L1LNOTE 52X

b2b43XcA1b0.25MNOTE 7eBAMON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLCreserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for anyparticular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including withoutlimitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applicationsand actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLCdoes not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended forsurgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation wherepersonal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC andits officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufactureof the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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