HM75N80

N-Channel Enhancement Mode Power MOSFET

General Description

The HM75N80 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.

Product Summary

BVDSS typ. RDS(ON) typ. max.

84 6.5 8.0

V mΩ mΩ

A ID 80

Features

● VDS=75V；ID=80A@ VGS=10V； RDS(ON)<8mΩ @ VGS=10V

● Special process technology for high ESD capability ● Special designed for Convertors and power controls ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation

100% UIS TESTED!

Application

● Power switching application

● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply

TO-220-3L top view

Schematic diagram

Package Marking And Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

-Quantity

-HM75N80 HM75N80 TO-220-3L

Table 1. Absolute Maximum Ratings (TA=25℃)

Parameter Symbol Value Unit Drain-Source Voltage (VGS=0V） Drain Current (DC) at Tc=25℃ Drain Current (DC) at Tc=100℃

Drain Current-Continuous@ Current-Pulsed (Note 1) Peak diode recovery voltage

VDS 75 V Gate-Source Voltage (VDS0V) VGS ±25 V ID (DC) 80 A IDM (pluse) 320 A dv/dt

30

V/ns

ID (DC) 60 A Maximum Power Dissipation(Tc=25℃) PD 170 W Derating factor

Single pulse avalanche energy (Note 2)

Operating Junction and Storage Temperature Range

1.13

W/℃

EAS 580 mJ TJ,TSTG -55 To 175 ℃

Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature

2.EAS condition：Tj=25℃,VDD=50V,VG=10V,L=0.3mH ,ID=62A;

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HM75N80

Thermal Resistance，Junction-to-Case（Maximum） Thermal Resistance，Junction-to-Ambient （Maximum）

RthJC RthJA

0.88 63

℃/W ℃/W

Table 2. Thermal Characteristic

Parameter Symbol Value Unit ==

Table 3. Electrical Characteristics (TA=25℃unless otherwise noted)

Parameter Symbol Condition

On/off states

Drain-Source Breakdown Voltage

BVDSS

Min Typ Max

Unit

VGS=0V ID=250μA 75 84 V VDS=75V,VGS0V 1 μA VDS=75V,VGS0V 10 μA VGS=±20V,VDS0V ±100

nA VDS=VGS,ID=250μA 2 2.85 4 V VGS=10V, ID40A 6.5 8 mΩ

Zero Gate Voltage Drain Current(Tc=25℃) IDSS Zero Gate Voltage Drain Current(Tc=125℃) IDSS Gate-Body Leakage Current Gate Threshold Voltage

Drain-Source On-State Resistance Dynamic Characteristics Forward Transconductance Input Capacitance Output Capacitance

Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Switching times Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time

Source- Drain Diode Characteristics Source-drain current(Body Diode) Pulsed Source-drain current(Body Diode) Forward on voltage(Note 1) Reverse Recovery Time(Note 1) Reverse Recovery Charge(Note 1) Forward Turn-on Time

IGSS VGS(th) RDS(ON)

=gFS VDS=5V,ID30A 66 S =Clss 4400 PF VDS=25V,VGS=0V,

Coss 340 PF =

F=1.0MHz = 260 PF Crss

=Qg 100 nC VDS=30V,ID=30A,

Qgs 20 nC VGS=10V

30 nC Qgd

td(on) 17.8 nS VDD=30V,ID=2A,RL=15Ω tr 11.8 nS tf

14.6 nS VGS=10V,RG=2.5Ω td(off) 56 nS ISD 80 A 1.2 V VSD Tj25℃,ISD=40A,VGS0V ISDM 320 A 36 nS trr Tj=25℃,IF=75A,di/dt=100A/μs

56 nC Qrr ton

Intrinsic turn-on time is negligible(turn-on is dominated by LS+LD)

Notes 1.Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 1.5%, RG=25Ω, Starting Tj=25℃

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HM75N80

2）Gate charge test circuit:

3）Switch Time Test Circuit：

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HM75N80

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (curves)

Figure1. Safe operating area Figure2. Source-Drain Diode Forward Voltage

Figure3. Output characteristics Figure4. Transfer characteristics

Figure5. Static drain-source on resistance Figure6. RDS(ON) vs Junction Temperature

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HM75N80

Figure9. Gate charge waveforms Figure10. Capacitance

Figure11. Normalized Maximum Transient Thermal Impedance

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HM75N80

TO-220-3L Package Information

Symbol

Dimensions In Millimeters Min

Max

Dimensions In Inches Min

Max

A 4.470 4.670 0.176 0.184 A1 2.520 2.820 0.099 0.111 b 0.710 0.910 0.028 0.036 b1 1.170 1.370 0.046 0.054 c 0.330 0.650 0.013 0.026 c1 1.200 1.400 0.047 0.055 D 10.010 10.350 0.394 0.407 E 8.500 8.900 0.335 0.350 e

2.540（TYP.） 0.100（TYP.）

E1 12.060 12.460 0.475 0.491 e1 4.980 5.180 0.196 0.204 H

8.440 REF.

0.332 REF.

F 2.590 2.890 0.102 0.114 h 0.000 0.300 0.000 0.012 L 13.400 13.800 0.528 0.543 V I

6.360 REF. 6.300 REF.

0.250 REF. 0.248 REF.

L1 3.560 3.960 0.140 0.156 Φ 3.735 3.935 0.147 0.155 Shenzhen H&M Semiconductor Co.Ltd

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HM75N80

ATTENTION:

■ Any and all H&M SEMI products described or contained herein do not have specifications that can handle applications that require

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